IRFS610A
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V Low RDS(ON) : 1.169 Ω (Typ.)
Absolute Maximum Ratings
Symbol VDSS
IDM VGS EAS IAR EAR dv/dt
TJ , TSTG
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25 o C) Continuous Drain Current (TC=100 o C)
Drain Current-Pulsed
O1
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
O2
Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 o C) Linear Derating Factor
O1 O1 O3
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 “ from case for 5-seconds
BVDSS = 200 V RDS(on) = 1.5 Ω ID = 2.5 A
TO-220F
1 2 3
1.Gate 2. Drain 3. Source
Value 200 2.5 1.6 10 +_ 30 42 2.5 2.2 5.0 22 0.18
- 55 to +150
Units V
A V m J A m J V/ns W W/o C o C
Thermal Resistance
Symbol
Rθ...
