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IRFS614B Datasheet 250v N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: IRF614B/IRFS614B November 2001 IRF614B/IRFS614B 250V N-Channel.

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies.

Key Features

  • 2.8A, 250V, RDS(on) = 2.0Ω @VGS = 10 V Low gate charge ( typical 8.1 nC) Low Crss ( typical 7.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G G DS TO-220 IRF Series GD S TO-220F IRFS Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Dra.

More Datasheets from Fairchild (now onsemi)

Part Number Description
IRFS610B 200V N-Channel MOSFET
IRFS620B 200V N-Channel MOSFET
IRFS624B 250V N-Channel MOSFET
IRFS630A Advanced Power MOSFET
IRFS630B 200V N-Channel MOSFET
IRFS634B 250V N-Channel MOSFET
IRFS640B 200V N-Channel MOSFET
IRFS644B 250V N-Channel MOSFET
IRFS650A Advanced Power MOSFET
IRFS650B 200V N-Channel MOSFET

IRFS614B Distributor