IRFS614B
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies.
Features
- -
- -
- - 2.8A, 250V, RDS(on) = 2.0Ω @VGS = 10 V Low gate charge ( typical 8.1 n C) Low Crss ( typical 7.5 p F) Fast switching 100% avalanche tested Improved dv/dt capability
G G DS
TO-220
IRF Series
GD S
TO-220F
IRFS Series
Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage
- Continuous (TC = 25°C) Drain Current
- Continuous (TC = 100°C) Drain Current
- Pulsed
(Note 1)
IRF614B 250 2.8 1.8 8.5 ± 30
(Note 2) (Note 1) (Note 1)...
