IRFSZ14A - Power MOSFET

Product Overview

Fairchild Semiconductor

Part number	IRFSZ14A
Manufacturer	Fairchild Semiconductor
File Size	250.50 KB
Description	Power MOSFET
Datasheet	IRFSZ14A Datasheet
Additional preview pages of the IRFSZ14A datasheet.

Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175¡É Operating Temperature Lower Leakage Current : 10 µA (Max. ) @ VDS = 60V Lower RDS(ON) : 0.097 Ω (Typ. ) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25oC ) Continuous Drain Current (TC=100oC ) Drain Current-Pulsed O1 Gate-to-Source Voltage Single Pul.

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Published: Aug 3, 2016 |