Datasheet Summary
Advanced Power MOSFET
Features
Avalanche Rugged Technology Rugged Gate Oxide Technology
..
IRFW/I520A
BVDSS = 100 V RDS(on) = 0.2 Ω ID = 9.2 A
D2-PAK
Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 µA (Max.) @ VDS = 100V Lower RDS(ON) : 0.155 Ω (Typ.)
Ο
I2-PAK
1 1 3 2 3
1. Gate 2. Drain 3....