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IRFWZ14A - Power MOSFET

Download the IRFWZ14A datasheet PDF. This datasheet also covers the IRFIZ14A variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Avalanche Rugged Technology.
  • Rugged Gate Oxide Technology.
  • Lower Input Capacitance.
  • Improved Gate Charge.
  • Extended Safe Operating Area.
  • 175°C Operating Temperature.
  • Lower Leakage Current: 10µA (Max. ) @ VDS = 60V.
  • Lower RDS(ON): 0.097Ω (Typ. ) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Curren.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRFIZ14A-FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRFWZ24A Power MOSFET Samsung
IRFWZ44A Power MOSFET Samsung
IRFW450 N-Channel MOSFET Transistor Inchange Semiconductor
IRFW610A Power MOSFET Samsung
IRFW630A Power MOSFET Samsung

Other Datasheets by Fairchild (now onsemi)

Part Number Description
IRFWZ14 Power MOSFET
IRFWZ24 Power MOSFET
IRFWZ34 Power MOSFET
IRFWZ34A Power MOSFET
IRFWZ44 Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
$GYDQFHG 3RZHU 026)(7 IRFW/IZ14A FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 175°C Operating Temperature ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 60V ♦ Lower RDS(ON): 0.097Ω (Typ.