IRFWZ24 Description
Advanced Power MOSFET IRFWZ24.
IRFWZ24 Key Features
- Avalanche Rugged Technology
- Rugged Gate Oxide Technology
- Lower Input Capacitance
- Improved Gate Charge
- Extended Safe Operating Area
- 175°C Operating Temperature
- Lower Leakage Current: 10µA (Max.) @ VDS = 60V
- Lower RDS(ON): 0.050Ω (Typ.)