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IRFWZ24A - Power MOSFET

Download the IRFWZ24A datasheet PDF. This datasheet also covers the IRFIZ24A variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175¡ ÉOperating Temperature Lower Leakage Current : 10 µA (Max. ) @ VDS = 60V Lower RDS(ON) : 0.050 Ω (Typ. ) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25oC ) Continuous Drain Current (TC=100oC ) Drain Current-Pulsed O1 Gate-to-Source Voltage Single Puls.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRFIZ24A-Samsung.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRFWZ24 Power MOSFET Fairchild Semiconductor
IRFWZ14 Power MOSFET Fairchild Semiconductor
IRFWZ14A Power MOSFET Fairchild Semiconductor
IRFWZ34 Power MOSFET Fairchild Semiconductor
IRFWZ34A Power MOSFET Fairchild Semiconductor

Other Datasheets by Samsung Semiconductor

Part Number Description
IRFWZ44A Power MOSFET
IRFW610A Power MOSFET
IRFW630A Power MOSFET
IRFW720A Power MOSFET
IRFW730A Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Advanced Power MOSFET IRFW/IZ24A FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175¡ ÉOperating Temperature Lower Leakage Current : 10 µA (Max.) @ VDS = 60V Lower RDS(ON) : 0.050 Ω (Typ.