Fairchild Semiconductor IRL520A
Advenced Power MOSFET
| Part No. | IRL520A |
|---|---|
| Datasheet | IRL520A Download |
| Manufacturer |  Fairchild Semiconductor |
| Description | Advenced Power MOSFET |
| Buy | Stock & Price |
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 100V ♦ Lower RDS(ON): 0.176Ω (Typ.) 1 2 3 IRL520A BVDSS = 100 V RDS(on) = 0.22Ω ID = 9.2 A TO-220 1.Gate 2. Drain 3. SourceABSOLUTE MAXIMUM RATINGS
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25°C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 from case for 5-seconds (2) (1) (1) (2) (1) Value 100 9.2 6.5 32 ±20 112 9.2 4.9 6.5 49 0.33 - 55 to +175 Units V A A V mJ A mJ V/ns W W/°C °C 300 Thermal Resistance Symbol RθJC RθCS RθJA Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. -0.5 -Max.
