Fairchild Semiconductor IRL520S
Power MOSFET
| Part No. | IRL520S |
|---|---|
| Datasheet | IRL520S Download |
| Manufacturer |  Fairchild Semiconductor |
| Description | Power MOSFET |
| Buy | Stock & Price |
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 175°C Operating Temperature ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 100V ♦ Lower RDS(ON): 0.176Ω (Typ.)ABSOLUTE MAXIMUM RATINGS
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Drain Current-Pulsed (1) Gate-to-Source Voltage Single Pulsed Avalanche Energy (2) Avalanche Current (1) Repetitive Avalanche Energy (1) Peak Diode Recovery dv/dt Total Power Dissipation (TA=25°C) * Total Power Dissipation (TC=25°C) Linear Derating Factor (3) Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 from case for 5-seconds BVDSS = 100 V RDS(on) = 0.22Ω ID = 9.2 A D2-PAK I2-PAK 2 1 3 1 2 3 1. Gate 2. Drain 3. Source Value 100 9.2 6.5 32 ±20 112 9.2 4.9 6.5 3.8 49 0.33 - 55 to +175 300 Units V A A V mJ A mJ V/ns W W W/°C °C Thermal Resistance Symbol Characteristic Typ.
