Key Features
- Avalanche Rugged Technology
- Rugged Gate Oxide Technology
- Lower Input Capacitance
- Improved Gate Charge
- Extended Safe Operating Area
- 175°C Operating Temperature
- Lower Leakage Current: 10µA (Max.) @ VDS = 100V
- Lower RDS(ON): 0.176Ω (Typ.)
Datasheets by Manufacturer
| Part Number |
Manufacturer |
Description |
|
IRL520S
|
Vishay |
Power MOSFET |
|
IRL520
|
Vishay |
Power MOSFET |
|
IRL520NL
|
Inchange Semiconductor |
N-Channel MOSFET |
|
IRL520N
|
Inchange Semiconductor |
TO-220F N-Channel MOSFET |
|
IRL520N
|
IRF |
HEXFET Power MOSFET |
|
IRL520A
|
Fairchild Semiconductor |
Advenced Power MOSFET |
|
IRL520L
|
Vishay |
Power MOSFET |
|
IRL520NS
|
Inchange Semiconductor |
N-Channel MOSFET |
|
IRL520N
|
Inchange Semiconductor |
TO-220C N-Channel MOSFET |
