IRL520
Description
Third generation power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
Key Features
- Dynamic dV/dt rating
- Repetitive avalanche rated Available
- Logic-level gate drive
- RDS(on) specified at VGS = 4 V and 5 V
- 175 °C operating temperature Available
- Fast switching
- Ease of paralleling
