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IRL520L - Power MOSFET

General Description

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The I2PAK (TO-262) is a through hole power package capable of accommodating die size up to HEX-4.

Key Features

  • Halogen-free According to IEC 61249-2-21 Definition.
  • Dynamic dV/dt Rating.
  • Repetitive Avalanche Rated.
  • Logic-Level Gate Drive.
  • RDS (on) Specified at VGS = 4 V and 5 V.
  • 175°C Operating Temperature.
  • Compliant to RoHS Directive 2002/95/EC.

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Datasheet Details

Part number IRL520L
Manufacturer Vishay
File Size 236.46 KB
Description Power MOSFET
Datasheet download datasheet IRL520L Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Power MOSFET IRL520L, SiHL520L Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 100 VGS = 5 V 12 3.0 7.1 Single I2PAK (TO-262) D 0.27 DS G G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Logic-Level Gate Drive • RDS (on) Specified at VGS = 4 V and 5 V • 175°C Operating Temperature • Compliant to RoHS Directive 2002/95/EC DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.