n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n Lower Leakage Current : 10 μA (Max. ) @ VDS = 100V n Lower RDS(ON) : 0.176Ω (Typ. )
IRLS520A
BVDSS = 100 V RDS(on) = 0.22Ω ID = 7.2 A
TO-220F
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25℃) Continuous Drain Current.
Full PDF Text Transcription for IRLS520A (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
IRLS520A. For precise diagrams, and layout, please refer to the original PDF.
www.DataSheet4U.com Advanced Power MOSFET FEATURES n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extende...
View more extracted text
Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n Lower Leakage Current : 10 μA (Max.) @ VDS = 100V n Lower RDS(ON) : 0.176Ω (Typ.) IRLS520A BVDSS = 100 V RDS(on) = 0.22Ω ID = 7.2 A TO-220F 1 2 3 1.Gate 2. Drain 3.
IRLS520A Datasheet
