Datasheet4U Logo Datasheet4U.com

IRLS620A - Advanced Power MOSFET

Datasheet Summary

Features

  • ! Logic-Level Gate Drive ! Avalanche Rugged Technology ! Rugged Gate Oxide Technology ! Lower Input Capacitance ! Improved Gate Charge ! Extended Safe Operating Area ! Lower Leakage Current : 10 μA (Max. ) @ VDS = 200V ! Lower RDS(ON) : 0.609Ω (Typ. ) IRLS620A BVDSS = 200 V RDS(on) = 0.8 Ω ID = 4.1 A TO-220F 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25℃).

📥 Download Datasheet

Datasheet preview – IRLS620A

Datasheet Details

Part number IRLS620A
Manufacturer Fairchild Semiconductor
File Size 278.05 KB
Description Advanced Power MOSFET
Datasheet download datasheet IRLS620A Datasheet
Additional preview pages of the IRLS620A datasheet.

📁 Similar Datasheet

  • IRLS610A - N-Channel MOSFET (INCHANGE)
  • IRLS-G5653 - INTEGRATED SWITCHER (International Rectifier)
  • IRLS3034-7PPBF - 40V Single N-Channel HEXFET Power MOSFET (International Rectifier)
  • IRLS3034PBF - 40V Single N-Channel HEXFET Power MOSFET (International Rectifier)
  • IRLS3034PBF - N-Channel MOSFET (INCHANGE)
  • IRLS3036 - N-Channel MOSFET (INCHANGE)
  • IRLS3036-7PPBF - 60V Single N-Channel HEXFET Power MOSFET (International Rectifier)
  • IRLS3036PBF - 60V Single N-Channel HEXFET Power MOSFET (International Rectifier)
  • IRLS3813 - N-Channel MOSFET (INCHANGE)
  • IRLS3813PBF - POWER MOSFET (International Rectifier)
Other Datasheets by Fairchild Semiconductor

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com Advanced Power MOSFET FEATURES ! Logic-Level Gate Drive ! Avalanche Rugged Technology ! Rugged Gate Oxide Technology ! Lower Input Capacitance ! Improved Gate Charge ! Extended Safe Operating Area ! Lower Leakage Current : 10 μA (Max.) @ VDS = 200V ! Lower RDS(ON) : 0.609Ω (Typ.) IRLS620A BVDSS = 200 V RDS(on) = 0.8 Ω ID = 4.1 A TO-220F 1 2 3 1.Gate 2. Drain 3.
Published: |