IRLS630A - Advanced Power MOSFET

Product Overview

Fairchild Semiconductor

Part number	IRLS630A
Manufacturer	Fairchild Semiconductor
File Size	306.36 KB
Description	Advanced Power MOSFET
Datasheet	IRLS630A Datasheet
Additional preview pages of the IRLS630A datasheet.

! Logic-Level Gate Drive ! Avalanche Rugged Technology ! Rugged Gate Oxide Technology ! Lower Input Capacitance ! Improved Gate Charge ! Extended Safe Operating Area ! Lower Leakage Current : 10 μA (Max. ) @ VDS = 200V ! Lower RDS(ON) : 0.335Ω (Typ. ) IRLS630A BVDSS = 200 V RDS(on) = 0.4 Ω ID = 6.5 A TO-220F 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25℃).

📁 Similar Datasheet

IRLS-G5653 - INTEGRATED SWITCHER (International Rectifier)
IRLS3034-7PPBF - 40V Single N-Channel HEXFET Power MOSFET (International Rectifier)
IRLS3034PBF - 40V Single N-Channel HEXFET Power MOSFET (International Rectifier)
IRLS3036 - N-Channel MOSFET (INCHANGE)
IRLS3036-7PPBF - 60V Single N-Channel HEXFET Power MOSFET (International Rectifier)
IRLS3036PBF - 60V Single N-Channel HEXFET Power MOSFET (International Rectifier)
IRLS3813 - N-Channel MOSFET (INCHANGE)
IRLS3813PBF - POWER MOSFET (International Rectifier)

Other Datasheets by Fairchild Semiconductor

Published: Dec 23, 2006 |