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IRLS640A - Advanced Power MOSFET

Key Features

  • ! Logic-Level Gate Drive ! Avalanche Rugged Technology ! Rugged Gate Oxide Technology ! Lower Input Capacitance ! Improved Gate Charge ! Extended Safe Operating Area ! Lower Leakage Current : 10 μA (Max. ) @ VDS = 200V ! Lower RDS(ON) : 0.145Ω (Typ. ) IRLS640A BVDSS = 200 V RDS(on) = 0.18 Ω ID = 9.8 A TO-220F 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25℃.

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Full PDF Text Transcription for IRLS640A (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IRLS640A. For precise diagrams, and layout, please refer to the original PDF.

www.DataSheet4U.com Advanced Power MOSFET FEATURES ! Logic-Level Gate Drive ! Avalanche Rugged Technology ! Rugged Gate Oxide Technology ! Lower Input Capacitance ! Impro...

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ology ! Rugged Gate Oxide Technology ! Lower Input Capacitance ! Improved Gate Charge ! Extended Safe Operating Area ! Lower Leakage Current : 10 μA (Max.) @ VDS = 200V ! Lower RDS(ON) : 0.145Ω (Typ.) IRLS640A BVDSS = 200 V RDS(on) = 0.18 Ω ID = 9.8 A TO-220F 1 2 3 1.Gate 2. Drain 3.

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