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IRLU110A - Power MOSFET

Download the IRLU110A datasheet PDF. This datasheet also covers the IRLR110A variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Avalanche Rugged Technology.
  • Rugged Gate Oxide Technology.
  • Lower Input Capacitance.
  • Improved Gate Charge.
  • Extended Safe Operating Area.
  • Lower Leakage Current: 10µA (Max. ) @ VDS = 100V.
  • Lower RDS(ON): 0.336Ω (Typ. ) IRLR/U110A BVDSS = 100 V RDS(on) = 0.44Ω ID = 4.7 A D-PAK 2 1 3 1 I-PAK 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Conti.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRLR110A_FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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IRLU120 HEXFET Power MOSFET International Rectifier

Other Datasheets by Fairchild (now onsemi)

Part Number Description
IRLU130A Advanced Power MOSFET
IRLU210A Power MOSFET
IRLU220A ADVANCED POWER MOSFET
IRLU230A Advanced Power MOSFET
IRL510 Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com $GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 100V ♦ Lower RDS(ON): 0.336Ω (Typ.) IRLR/U110A BVDSS = 100 V RDS(on) = 0.44Ω ID = 4.7 A D-PAK 2 1 3 1 I-PAK 2 3 1. Gate 2. Drain 3.