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IRLU110 - Power MOSFET

Download the IRLU110 datasheet PDF. This datasheet also covers the IRLR110 variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.

Key Features

  • Halogen-free According to IEC 61249-2-21 Definition.
  • Dynamic dV/dt Rating.
  • Repetitive Avalanche Rated.
  • Surface Mount (IRLR110, SiHLR110).
  • Straight Lead (IRLU110, SiHLU110).
  • Available in Tape and Reel.
  • Logic-Level Gate Drive.
  • RDS(on) Specified at VGS = 4 V and 5 V.
  • Compliant to RoHS Directive 2002/95/EC.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRLR110-Vishay.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number IRLU110
Manufacturer Vishay
File Size 1.83 MB
Description Power MOSFET
Datasheet download datasheet IRLU110 Datasheet

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Other Datasheets by Vishay

Part Number Description
IRLU120 Power MOSFET
IRLU024 Power MOSFET
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IRL520 Power MOSFET
IRL520L Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IRLR110, IRLU110, SiHLR110, SiHLU110 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 100 VGS = 5.0 V 6.1 2.0 3.3 Single 0.54 D DPAK (TO-252) D IPAK (TO-251) D G GS GD S S N-Channel MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRLR110, SiHLR110) • Straight Lead (IRLU110, SiHLU110) • Available in Tape and Reel • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V • Compliant to RoHS Directive 2002/95/EC DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.