Fairchild Semiconductor J6810
NPN Triple Diffused Planar Silicon Transistor
ABSOLUTE MAXIMUM RATINGS
TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP* PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Rating 1500 750 6 10 20 60 150 -55 ~ 150 Units V V V A A W °C °C * Pulse Test: Pulse Width=5ms, Duty Cycle < 10%ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted Symbol ICES ICBO IEBO BVEBO hFE1 hFE2 VCE(sat) VBE(sat) tSTG* tF* Parameter Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Storage Time Fall Time Test Conditions VCB=1400V, RBE=0 VCB=800V, IE=0 VEB=4V, IC=0 IE=500µA, IC=0 VCE=5V, IC=1A VCE=5V, IC=6A IC=6A, IB=1.5A IC=6A, IB=1.5A VCC=200V, IC=6A, RL=33Ω IB1=1.2A, IB2= - 2.4A 6 10 5 8 3 1.5 3 0.2 V V µs µs Min Typ Max 1 10 1 Units mA µA mA V *...