Fairchild Semiconductor J6815
NPN Silicon Transistor
ABSOLUTE MAXIMUM RATINGS
TC=25°C unless otherwise noted Symbol Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current (DC) ICP* Collector Current (Pulse) PC Collector Dissipation TJ Junction Temperature TSTG Storage Temperature * Pulse Test: PW=300µs, duty Cycle=2% Pulsed Rating 1500 750 6 15 25 60 150 -55 ~ 150 Units V V V A A W °C °CELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units ICES Collector Cut-off Current ICBO Collector Cut-off Current IEBO Emitter Cut-off Current BVCBO Collector-Base Breakdown Voltage BVCEO Collector-Emitter Breakdown Voltage BVEBO Emitter-Base Breakdown Voltage hFE1 hFE2 DC Current Gain VCE(sat) Collector-Emitter Saturation Voltage VBE(sat) Base-Emitter Saturation Voltage tSTG* Storage Time tF* Fall Time * Pulse Test: PW=20µs, duty Cycle=1% Pulsed VCB=1400V, RBE=0 VCB=800V, IE=0 VEB=4V, IC=0 IC=500µA, IE=0 IC=5mA, IB=0 IE=500µA, IC=0 VCE=5...