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KSA539 - PNP Epitaxial Silicon Transistor

Key Features

  • Low Frequency Amplifier.
  • Complement to KSC815.
  • Collector-Base Voltage: VCBO = -60 V.
  • Collector Power Dissipation : PC = 400 mW.
  • Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base).
  • Non Suffix “-C” means Side Collector (1. Emitter 2. Base 3. Collector) 123 Straight Lead Bulk Packing TO-92 1. Emitter 12 3 2. Base 3. Collector Bent Lead Tape & Reel Ammo Packing Ordering Information Part Number KSA539CYTA Top Mark A539.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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KSA539 — PNP Epitaxial Silicon Transistor September 2015 KSA539 PNP Epitaxial Silicon Transistor Features • Low Frequency Amplifier • Complement to KSC815 • Collector-Base Voltage: VCBO = -60 V • Collector Power Dissipation : PC = 400 mW • Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) • Non Suffix “-C” means Side Collector (1. Emitter 2. Base 3. Collector) 123 Straight Lead Bulk Packing TO-92 1. Emitter 12 3 2. Base 3. Collector Bent Lead Tape & Reel Ammo Packing Ordering Information Part Number KSA539CYTA Top Mark A539 Package TO-92 3L Packing Method Ammo Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device.