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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
KSA539 TRANSISTOR (PNP)
FEATURES z Low Saturation Medium Current Application z Complement to KSC815
TO – 92
1.EMITTER 2.BASE 3.COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC RθJA TJ Tstg
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To ambient Junction Temperature Storage Temperature
Value -60 -45 -5 -0.2 400 312 150
-55~+150
Unit V V V A
mW ℃/W
℃ ℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
V(BR)CBO IC=- 0.
KSA539 Datasheet
