Fairchild Semiconductor KSA708
PNP Epitaxial Silicon Transistor
ABSOLUTE MAXIMUM RATINGS
Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings -80 -60 -8 -700 800 150 -55 ~ 150 Units V V V mA mW °C °CELECTRICAL CHARACTERISTICS
Ta=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE (sat) VBE (sat) fT Cob Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Test Condition IC= -100µA, IE=0 IC= -10mA, IB=0 IE= -100µA, IC=0 VCB= -60V, IE=0 VEB= -5V, IC=0 VCE= -2V, IC= -50mA IC= -500mA, IB= -50mA IC= -500mA, IB= -50mA VCE= -10V, IC= -50mA VCB= -10V, IE=0, f=1MHz 40 -0.3 -0.9 50 13 Min. -80 -60 -8 -0.1 -0.1 240 -0.7 1.1 V V MHz pF Typ.