onsemi KSA708
PNP Epitaxial Silicon Transistor
| Part No. | KSA708 |
|---|---|
| Datasheet | KSA708 Download |
| Manufacturer |  onsemi |
| Description | PNP Epitaxial Silicon Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(TA = 25C unless otherwise noted.) Symbol Parameter Ratings Unit VCBO Collector−Base Voltage −80 V VCEO Collector−Emitter Voltage −60 V VEBO Emitter−Base Voltage −8 V IC Collector Current −700 mA PC Collector Power Dissipation 800 mW TJ Junction Temperature 150 C TSTG Storage Temperature −55 to +150 C Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Emitter T 2. Base 123 3. Collector 1 2 3 TO−92 3 TO−92 3 LF CASE 135AN CASE 135AR MARKING DIAGRAM A708Y AWWY A708Y A WW Y = Specific Device Code = Assembly Site = Work Week = Year of Production ORDERING INFORMATION Device KSA708YBU Package TO−92 3 (Pb−Free) Shipping 10000 Units / Bulk KSA708YTA TO−92 3 LF 2000 Units / (Pb−Free) FNFLD DISCONTINUED (Note 1) KSA708CYTA TO−92 3 LF (Pb−Free) 2000 Units / FNFLDELECTRICAL CHARACTERISTICS
(TA = 25C unless otherwise noted.) Symbol Parameter Conditions 1.
