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KSC1173 - NPN Epitaxial Silicon Transistor

Key Features

  • Low Frequency Power Amplifier, Power Regulator.
  • Collector Current : IC=3A.
  • Collector Dissipation : PC=10W (TC=25°C).
  • Complement to KSA473 August 2009 1 TO-220 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings.
  • TA = 25°C unless otherwise noted Symbol Parameter Value Units BVCBO Collector-Base Voltage 30 V BVCEO Collector-Emitter Voltage 30 V BVEBO Emitter-Base Voltage 5 V IC Collector Current 3 A PC Collector Dissipation (TC.

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KSC1173 — NPN Epitaxial Silicon Transistor KSC1173 NPN Epitaxial Silicon Transistor Features • Low Frequency Power Amplifier, Power Regulator • Collector Current : IC=3A • Collector Dissipation : PC=10W (TC=25°C) • Complement to KSA473 August 2009 1 TO-220 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings * TA = 25°C unless otherwise noted Symbol Parameter Value Units BVCBO Collector-Base Voltage 30 V BVCEO Collector-Emitter Voltage 30 V BVEBO Emitter-Base Voltage 5 V IC Collector Current 3 A PC Collector Dissipation (TC=25°C) 10 W TJ Junction Temperature 150 °C TSTG Storage Temperature -55 to +150 °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.