Datasheet Details
| Part number | KSC1173 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 195.88 KB |
| Description | NPN Transistor |
| Datasheet | KSC1173-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | KSC1173 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 195.88 KB |
| Description | NPN Transistor |
| Datasheet | KSC1173-INCHANGE.pdf |
|
|
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·Low Collector Saturation Voltage ·Complement to Type KSA473 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Car radio,car stereo output stage amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 10 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 12.5 UNIT ℃/W KSC1173 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS KSC1173 MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
KSC1173 | NPN Epitaxial Silicon Transistor | Fairchild Semiconductor |
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