KSC2881 Datasheet | Fairchild Semiconductor

KSC2881 NPN Epitaxial Silicon Transistor July 2005 NPN Epitaxial Silicon Transistor Power Amplifier - Collector-Emitter Voltage : VCEO=120V - Current Gain Bandwidth Productor : f T=120MHz - Collector Dissipation : PC=1~2W in Mounted on Ceramic Board - plement to KSA1201 Marking SOT-89 1. Base 2. Collector 3. Emitter 28 PY Absolute Maximum Ratings Ta = 25°C unless otherwise noted Symbol Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation PC- Junction Temperature TSTG Storage Temperature - Mounted on Ceramic Board (250mm2 x 0.8mm) Electrical Characteristics Ta = 25°C unless otherwise noted Symbol Parameter Test Condition BVCEO BVEBO ICBO IEBO h FE VCE (sat) VBE (on) f T Cob Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output...