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KSC2881 - NPN Epitaxial Silicon Transistor

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KSC2881 KSC2881 Power Amplifier • • • • Collector-Emitter Voltage : VCEO=120V Current Gain Bandwidth Productor : fT=120MHz Collector Dissipation : PC=1~2W in Mounted on Ceramic Board Complement to KSA1201 1 SOT-89 1. Base 2. Collector 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC PC* TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Value 120 120 5 800 160 500 1,000 150 -55 ~ 150 Units V V V mA mA mW mW °C °C * Mounted on Ceramic Board (250mm2x0.
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