KSC2881 Datasheet | Kexin Semiconductor

Features Collector-Emitter Voltage : VCEO=120V Current Gain Bandwidth Productor : f T=120MHz Collector Dissipation : PC=1 to 2W in Mounted on Ceramic Board Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature - Mounted on Ceramic Board (250mm2X0.8mm) Symbol VCBO VCEO VEBO IC IB PC PC- TJ TSTG Rating 120 120 5 800 160 500 1,000 150 -55 to +150 Electrical Characteristics Ta = 25 Parameter Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Symbol BVCEO BVEBO ICBO IEBO h FE VCE (sat) VBE (on) f T Cob Testconditons IC=10ìA, IB=0 IE=1m A, IC=0 VCB=120V, IE=0 VBE=5V, IC=0 VCE=5V, IC=100m A IC=500m A, IB=50m A VCE=5V, IC=500m A VCE=5V, IC=100m A VCB=10V, IE=0, f=1MHz h FE Classification Marking Rank Type SCO O 80 160 SCY Y 120 240 Unit V V V m A m A m W m W Min Typ Max Unit 100 n A 100 n A 1.0 V 1.0 V MHz 30 p F .kexin..cn...