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KSC2982 - NPN Epitaxial Silicon Transistor

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KSC2982 KSC2982 Strobe Flash & Medium Power Amplifier • Excellent hFE Linearity : hFE1=140 ~ 600 • Low Collector-Emitter Saturation Voltage : VCE(sat)=0.5V • Collector Dissipation : PC=1~2W in Mounted on Ceramic Board 1 SOT-89 1. Base 2. Collector 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCES VCEO VEBO IC ICP IB IBP PC PC* TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter Base Voltage Collector Current (DC) * Collector Current (Pulse) Base Current (DC) * Base Current (Pulse) Collector Power Dissipation Junction Temperature Storage Temperature Value 30 30 10 6 2 4 0.4 0.