KSD560 Datasheet | Fairchild Semiconductor

Low Frequency Power Amplifier - Low Speed Switching Industrial Use - plement to KSB601 TO-220 2.Collector 3.Emitter 1.Base NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB PC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) - Collector Current (Pulse) Base Current Collector Dissipation (Ta=25°C) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 150 100 7 5 8 0.5 1.5 30 150 - 55 ~ 150 Units V V V A A A W W °C °C - PW≤10ms, Duty Cycle≤50% Electrical Characteristics TC=25°C unless otherwise noted Symbol ICBO h FE1 h FE2 VCE(sat) VBE(sat) t ON t STG f T Parameter Collector Cut-off Current - DC Current Gain - Collector-Emitter Saturation Voltage - Base-Emitter Saturation Voltage Turn ON Time Storage Time Fall Time Test Condition VCB = 100V, IE = 0 VCE = 2V, IC = 3A VCE = 2V, IC = 5A IC = 3A, IB = 3m A VCC ⋅=⋅ 50V, IC = 3A IB1 = - IB2 = 3m A RL = 16.7Ω IC = 3A, IB = 3m A Min. 2K 500 Typ. 6K 0.9 1.6 1 3.5 1.2 Max. 1 15K 1.5 2 V V µs µs µs Units µA - Pulse Test: PW≤350µs, Duty Cycle≤2% Pulsed h FE Classification Classification h FE1 R 2000 ~ 5000 O 3000 ~ 7000 Y 5000 ~ 15000 ©2000 Fairchild Semiconductor International Rev. A, February 2000 Typical Characteristics .0m =1 .7m IC[A], COLLECTOR CURRENT =0 IB = 0.5m A VCE = 2V IB h FE, DC CURRENT GAIN IB = 0.4m A IB = 0.35m...