Datasheet Details
| Part number | KSD560 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 190.92 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | KSD560-InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor KSD560.
| Part number | KSD560 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 190.92 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | KSD560-InchangeSemiconductor.pdf |
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·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min) ·High DC Current Gain : hFE= 2000(Min) @IC= 3.0A ·Low Saturation Voltage ·plement to Type KSB601 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifiers and low speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 150 VCEO Collector-Emitter Voltage 100 VEBO Emitter-Base Voltage 7 IC Collector Current-Continuous 5 ICP Collector Current-Peak 8 IB Base Current-Continuous 0.5 Collector Power Dissipation @ Ta=25℃ 1.5 PC Collector Power Dissipation @ TC=25℃ 30 TJ Junction Temperature 150 UNIT V V V A A A W ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS INCHANGE Semiconductor KSD560 MIN TYP.
MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA;, IB=0 100 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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KSD560 | Low Frequency Power Amplifier | Fairchild Semiconductor |
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