KSD560
KSD560 is Silicon NPN Power Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 100V(Min)
- High DC Current Gain
: h FE= 2000(Min) @IC= 3.0A
- Low Saturation Voltage
- plement to Type KSB601
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for low frequency power amplifiers and low speed switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Collector Power Dissipation @ Ta=25℃
Collector Power Dissipation @ TC=25℃
Junction Temperature
UNIT V V V A A A
℃
Tstg
Storage Temperature...
