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KSD560 - Silicon NPN Power Transistor

General Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min) High DC Current Gain : hFE= 2000(Min) @IC= 3.0A Low Saturation Voltage Complement to Type KSB601 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for lo

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isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor KSD560 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min) ·High DC Current Gain : hFE= 2000(Min) @IC= 3.0A ·Low Saturation Voltage ·Complement to Type KSB601 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifiers and low speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 150 VCEO Collector-Emitter Voltage 100 VEBO Emitter-Base Voltage 7 IC Collector Current-Continuous 5 ICP Collector Current-Peak 8 IB Base Current-Continuous 0.5 Collector Power Dissipation @ Ta=25℃ 1.