KSP94 Datasheet | Fairchild Semiconductor

High Voltage Transistor - High Collector-Emitter Voltage: VCEO= -400V - Low Collector-Emitter Saturation Voltage - plement to KSP44 TO-92 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Value -400 -400 -6 -300 625 150 -55~150 Units V V V m A m W °C °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCES BVEBO ICBO ICES IEBO h FE1 h FE2 h FE3 h FE4 VCE (sat)1 VCE (sat)2 VBE (sat) Cob Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current DC Current Gain Test Condition IC= -100µA, IE=0 IC= -100µA, VBE=0 IE= -10µA, IC=0 VCB= -300V, VE=0 VCE= -400V, VBE=0V VBE= -4V, IC=0 VCE= -10V, IC= -1m A VCE= -10V, IC= -10m A VCE= -10V, IC= -50m A VCE= -10V, IC= -100m A IC= -10m A, IB= -1m A IC= -50m A, IB= -5m A IC= -10m A, IB= -1m A VCB= -20V, IE=0, f=1MHz 7 40 50 45 40 Min. -400 -400 -6 -100 -1 -100 300 Typ. Max. Units V V V n A µA n A Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Output Capacitance -500 -750 -750 m V m V m V p F ©2002 Fairchild Semiconductor Corporation Rev. A2, July 2002 Typical Characteristics -10 VBE(sat), SATURATION VOLTAGE VCE = -10V IC = 10 IB h FE, DC CURRENT GAIN -1 -0.1 1 -1 -10 -100 -1000 -0.01 -1 -10 -100 -1000 IC[m A], COLLECTOR CURRENT IC[m A], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage -10 VCE(sat), SATURATION VOLTAGE IC = 10 IB IE = 0 f = 1MHz -1 Cob[p F],...