KST10 Datasheet | Fairchild Semiconductor

VHF/UHF Transistor 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO PC TSTG RTH(j-a) Parameter Collector Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Power Dissipation Storage Temperature Thermal Resistance junction to Ambient Value 30 25 3 350 150 357 Units V V V m W °C °C/W - Refer to KSP10 for graphs Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO h FE VCE (sat) VBE f T Cob Crb Cc- rbb´ Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance mon-Base Feedback Capacitance Collector Base Time Constant Test Condition IC=100µA, IE=0 IC=1m A, IB=0 IE=10µA, IC=0 VCB=25V, IE=0 VBE=2V, IC=0 VCE=10V, IC=4m A IC=4m A, IB=0.4m A VCE=10V, IC=4m A VCE=10V, IC=4m A, f=100MHz VCB=10V, IE=0, f=1MHz VCB=10V, IE=0, f=1MHz VCB=10V, IC=4m A, f=31.8MHz 650 0.7 0.65 9 60 0.5 0.95 V V MHz p F p F p F Min. 30 25 3 100 100 Max. Units V V V n A n A Marking 3E ©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002 Package Dimensions SOT-23 0.20 MIN 2.40 ±0.10 0.40 ±0.03 ±0.10 0.45~0.60 0.03~0.10 0.38 REF 0.40 ±0.03 0.96~1.14 2.90 ±0.10 - 0.023 +0.05 0.95 ±0.03 0.95 ±0.03 1.90 ±0.03 0.508REF 0.97REF Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ Active Array™ FACT Quiet series™ Bottomless™ FAST® FASTr™ Cool FET™ CROSSVOLT™ FRFET™ Global Optoisolator™ DOME™ Eco SPARK™ GTO™ E2CMOS™ Hi Se C™ En Signa™ I2C™...