KST11 Datasheet | Fairchild Semiconductor

KST10/11 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSITOR TO-92 ABSOLUTE MAXIMUM RATINGS (TA=25°C) Characteristic Symbol Rating Unit Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Dissipation (TA=25°C) Derate above 25°C Collector Dissipation (TA=25°C) Derate above 25°C Junction Temperature Storage Temperature Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient VCBO VCEO VEBO PC TJ TSTG Rth(j-c) Rth(j-a) 30 25 3.0 350 150 -55~150 125 357 V V V m W m W/°C W W/°C °C °C °C/W °C/W 1. Emitter 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (TA=25°C) Characteristic Symbol Test Conditions Collector-Baser Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Collector Base Capacitance Collector Base Feedback Capacitance : KSP10 : KSP11 Collector Base Time Constant - Pulse Test: PW≤300µs, Duty Cycle≤2% BVCBO BVCEO BVEBO ICBO IEBO h FE VCE (sat) VBE (sat) CCB CRB Cc- rbb´ IC=100µA, IE=0 IC=1m A, IB=0 IE=10µA, IC=0 VCB=25V, IE=0 VEB=2V, IC=0 VCE=10V, IC=4m A IC=4m A, IB=0.4m A VCE=10V, IC=4m A VCE=10V, IC=4m A VCB=10V, IE=0, f=1MHz VCB=10V, IE=0, f=1MHz VCB=10V, IC=4m A, f=31.8MHz Min 30 25...