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KST10/11
NPN EPITAXIAL SILICON TRANSISTOR
AMPLIFIER TRANSITOR
TO-92
ABSOLUTE MAXIMUM RATINGS (TA=25°C)
Characteristic
Symbol Rating
Unit
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Dissipation (TA=25°C)
Derate above 25°C Collector Dissipation (TA=25°C)
Derate above 25°C Junction Temperature Storage Temperature
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
VCBO VCEO VEBO PC
PC
TJ TSTG Rth(j-c) Rth(j-a)
30 25 3.0 350
2.8
1.0
8.0
150 -55~150
125 357
V V V mW
mW/°C W
W/°C °C °C
°C/W °C/W
1. Emitter 2. Base 3.
KST11 Datasheet
