LED55BF
LED55BF is GaAs INFRARED EMITTING DIODE manufactured by Fairchild Semiconductor.
DESCRIPTION
The LED55BF/LED55CF/LED56F series are 940nm LEDs in a wide angle, TO-46 package.
FEATURES
- Good optical to mechanical alignment
- Mechanically and wavelength matched to the TO-18 series phototransistor
- Hermetically sealed package
- High irradiance level
2001 Fairchild Semiconductor Corporation DS300313 6/05/01
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Ga As INFRARED EMITTING DIODE
ABSOLUTE MAXIMUM RATINGS
Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(3,4,5 and 6) Soldering Temperature (Flow)(3,4 and 6) Continuous Forward Current Forward Current (pw, 1µs; 200Hz) Reverse Voltage Power Dissipation (TA = 25°C)(1) Power Dissipation (TC = 25°C)(2) Symbol TOPR TSTG TSOL-I TSOL-F IF IF VR PD PD
LED55CF
Rating -65 to +125 -65 to +150 240 for 5 sec 260 for 10 sec 100 10 3 170 1.3
LED56F
Unit °C °C °C °C m A A V m W W
(TA = 25°C unless otherwise specified)
NOTE: 1. Derate power dissipation linearly 1.70 m W/°C above 25°C ambient. 2. Derate power dissipation linearly 13.0 m W/°C above 25°C case. 3. RMA flux is remended. 4. Methanol or isopropyl alcohols are remended as cleaning agents. 5. Soldering iron tip 1/16” (1.6mm) minimum from housing. 6. As long as leads are not under any stress or spring tension 7. Total power output, PO, is the total power radiated by the device into a solid angle of 2 ! steradians.
ELECTRICAL / OPTICAL CHARACTERISTICS
PARAMETER TEST CONDITIONS
(TA =25°C) (All measurements made under pulse conditions)
SYMBOL MIN TYP MAX UNITS
Peak Emission Wavelength Emission Angle at 1/2 Power Forward Voltage Reverse Leakage Current Total Power LED55BF(7) Total Power LED55CF(7) Total Power LED56F(7) Rise Time 0-90% of output Fall Time 100-10% of output
IF = 100 m A IF = 100 m A VR = 3 V IF = 100 m A IF = 100 m A IF = 100 m A
"PE # VF IR PO PO PO tr tf
- -
- - 3.5 5.4 1.5
- -
940 ±40
- -
- -
- 1.0 1.0
- - 1.7 10
- -
- -
- nm Deg. V µA m W m W m W µs µs
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