MBRS140 Datasheet | Fairchild Semiconductor

Description : Schottky Barrier Diodes make use of the rectification effect of a metal to silicon barrier. They are ideally suited for high frequency rectification in switching regulators & converters. This device offers a low forward voltage performance in a power surface mount package in applications where size and weight are critical. Features : - pact surface mount package with J-bend leads (SMB). - 1.5 Watt Power Dissipation package. - 1.0 Ampere, forward voltage less than 600 mv Ordering: - 13 inch reel (330 mm); 12 mm Tape; 3,000 units per reel. Absolute Maximum Ratings- Parameter Storage Temperature Maximum Junction Temperature TA = 25OC unless otherwise noted Value -65 to +150 -65 to +125 40 1.0 2.0 40 12 Units Repetitive Peak Reverse Voltage (VRRM) Average Rectified Forward Current (TL = 115OC) Average Rectified Forward Current (TL = 100OC) Surge Non Repetitive Forward Current (Half wave, single phase, 60 Hz) Junction to Case for Thermal Resistance (RØJL) SMB Package (DO-214AA) C/W - These ratings are limiting values above which the serviceability of any semiconductor device may be impaired Top Mark: B140 Electrical Characteristics SYM IR VF TA = 25OC unless otherwise noted Actual Size CHARACTERISTICS Reverse Leakage Current PW 300 us, <2% Duty Cycle Forward Voltage PW 300 us, <2% Duty Cycle MAX 1.0 10 550 UNITS m A m A m V TEST CONDITIONS VR = 40 V; Tj = 25OC VR = 40 V; Tj = 100OC IF = 1.0 A; Tj = 25OC © 1997 Fairchild Semiconductor Corporation 5 I F - FORWARD CURRENT (A) 2 1 0.5 0.2 0.1 0.05 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 V F - FORWARD VOLTAGE (V) 0.9 1 - REVERSE LEAKAGE CURRENT (m A) Forward Voltage vs Temperature Reverse Leakage Current vs Temperature 5 1 125ºC 100ºC...