MBRS140T3 Datasheet | Motorola Semiconductor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MBRS140T3/D Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal- to- silicon power diode. State- of- the- art geometry Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where pact size and weight are critical to the system. - - - - - - Small pact Surface Mountable Package with J- Bend Leads Rectangular Package for Automated Handling Highly Stable Oxide Passivated Junction Very Low Forward Voltage Drop (0.55 Volts Max @ 1.0 A, TJ = 25°C) Excellent Ability to Withstand Reverse Avalanche Energy Transients Guardring for Stress Protection Motorola Preferred Device SCHOTTKY BARRIER RECTIFIERS 1.0 AMPERE 40 VOLTS Mechanical Characteristics: - Case: Epoxy, Molded - Weight: 95 mg (approximately) - Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable - Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds - Shipped in 12 mm Tape and Reel, 2500 units per reel - Polarity: Notch in Plastic Body Indicates Cathode Lead - Marking: B140 MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current TL = 115°C Symbol VRRM VRWM VR IF(AV) IFSM TJ CASE 403A- 03 Value 40 Unit Volts 1.0 40 - 65 to +125 Amps Amps °C Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) Operating Junction Temperature THERMAL CHARACTERISTICS Thermal Resistance - Junction to Lead (TL = 25°C) RθJL 12 °C/W ELECTRICAL CHARACTERISTICS...