Fairchild Semiconductor MJD29
General Purpose Amplifier
APPLICATIONS
● Load Formed for Surface Mount Application (No Suffix)● Straight Lead (I-PAK, “- I” Suffix)
● Electrically Similar to Popular TIP29 and TIP29C 1 D-PAK 1.Base 1 I-PAK 3.Emitter 2.Collector NPN Epitaxial Silicon Transistor
ABSOLUTE MAXIMUM RATINGS
TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : MJD29 : MJD29C VCEO Collector-Emitter Voltage : MJD29 : MJD29C Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Collector Dissipation (Ta=25°C) TJ TSTG Junction Temperature Storage Temperature 40 100 40 100 5 1 3 0.4 15 1.56 150 - 65 ~ 150 V V V V V A A A W W °C °C Value Units VEBO IC ICP IB PCELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted Symbol VCEO(sus) Parameter *Collector-Emitter Sustaining Voltage : MJD29 : MJD29C Collector Cut-off Current : MJD29 : MJD29C ICES Collector Cut-off Current : MJD29 : MJD29C IEBO hFE VCE(sat) VBE(on) fT Emitter Cut-off Current *DC Current Gai...