MJD210 Datasheet PDF

APPLICATIONS

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● High DC Current Gain Low Collector Emitter Saturation Voltage Lead Formed for Surface Mount

APPLICATIONS

(No Suffix) Straight Lead (I-PAK, “ - I “ Suffix) 1 D-PAK 1.Base 1 I-PAK 3.Emitter 2.Collector PNP Epitaxial Silicon Transistor

ABSOLUTE MAXIMUM RATINGS

TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Peck Current (Pulse) Base Current Collector Dissipation (TC = 25°C) Collector Dissipation (Ta = 25°C) Junction Temperature Storage Temperature Value - 40 - 25 -8 -5 - 10 -1 12.5 1.4 150 - 65 ~ 150 Units V V V A A A W W °C °C

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted Symbol VCEO(sus) ICBO IEBO hFE Parameter * Collector-Emitter Sustaining Voltage Collector Cut-off Current Emitter Cut-off Current * DC Current Gain Test Condition IC = - 10mA, IB = 0 VCB = - 40V, IE = 0 VEBO = - 8V, IC = 0 VCE = - 1V, IC = - 500mA VCE...