onsemi MJD210
Complementary Plastic Power Transistors
| Part No. | MJD210 |
|---|---|
| Datasheet | MJD210 Download |
| Manufacturer |  onsemi |
| Description | Complementary Plastic Power Transistors |
| Buy | Stock & Price |
APPLICATIONS
Designed for low voltage, low−power, high−gain audio amplifier applications.FEATURES
● Collector−Emitter Sustaining Voltage −● High DC Current Gain − hFE = 70 (Min) @ IC = 500 mAdc
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● = 45 (Min) @ IC = 2 Adc = 10 (Min) @ IC = 5 Adc Lead Formed for Surface Mount
APPLICATIONS
in Plastic Sleeves (No Suffix) Low Collector−Emitter Saturation Voltage − VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc = 0.75 Vdc (Max) @ IC = 2.0 Adc High Current−Gain − Bandwidth Product − fT = 65 MHz (Min) @ IC = 100 mAdc Annular Construction for Low Leakage − ICBO = 100 nAdc @ Rated VCB Epoxy Meets UL 94 V−0 @ 0.125 in ESD Ratings: Human Body Model, 3B u 8000 V Machine Model, C u 400 V Pb−Free Packages are Available VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS, 12.5 WATTS 4 1 2 3 DPAK CASE 369C STYLE 1 MARKING DIAGRAM YWW J2x0GMAXIMUM RATINGS
Rating Collector−Base Voltage Collector−Emitter Voltage Emitter−Base Voltage Collector Current Base Current T...
