Motorola MJD210
SILICON POWER TRANSISTORS
| Part No. | MJD210 |
|---|---|
| Datasheet | MJD210 Download |
| Manufacturer |  Motorola |
| Description | SILICON POWER TRANSISTORS |
| Buy | Stock & Price |
APPLICATIONS
. . . designed for low voltage, low–power, high–gain audio amplifier applications.● Collector–Emitter Sustaining Voltage — VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc
● High DC Current Gain — hFE = 70 (Min) @ IC = 500 mAdc = 45 (Min) @ IC = 2 Adc = 10 (Min) @ IC = 5 Adc
● Lead Formed for Surface Mount
APPLICATIONS
in Plastic Sleeves (No Suffix)● Straight Lead Version in Plastic Sleeves (“–1” Suffix)
● Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)
● Low Collector–Emitter Saturation Voltage — VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc = 0.75 Vdc (Max) @ IC = 2.0 Adc
● High Current–Gain — Bandwidth Product — fT = 65 MHz (Min) @ IC = 100 mAdc
● Annular Construction for Low Leakage — ICBO = 100 nAdc @ Rated VCB
MAXIMUM RATINGS
MJD200 PNP MJD210 SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS NPN ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ...
