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MJD210 - PNP Transistor

General Description

high-gain audio amplifier applications.

FEATURE Collector-Emitter Sustaining Voltage VCEO(SUS) =-25V (Min) @ IC =-10mA High DC Current Gain hFE =70 (Min) @ IC=-500mA =45 (Min) @ IC=-2A =10 (Min) @ IC=-5A Lead

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD MJD210 PNP SILICON TRANSISTOR PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS  DESCRIPTION The UTC MJD210 is designed for low voltage, low-power, high-gain audio amplifier applications. 1 TO-251  FEATURE * Collector-Emitter Sustaining Voltage VCEO(SUS) =-25V (Min) @ IC =-10mA * High DC Current Gain hFE =70 (Min) @ IC=-500mA =45 (Min) @ IC=-2A =10 (Min) @ IC=-5A * Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) * Straight Lead Version in Plastic Sleeves (“-1” Suffix) * Lead Formed Version in 16mm Tape and Reel (“T4” Suffix) * Low Collector – Emitter Saturation Voltage VCE(SAT) = -0.3V (Max) @ IC =-500mA = -0.75V (Max) @ IC = -2.