| Part Number | MJD210 Datasheet |
|---|---|
| Manufacturer | onsemi |
| Overview |
MJD200 (NPN) MJD210 (PNP) Complementary Plastic Power Transistors
NPN/PNP Silicon DPAK For Surface Mount Applications
Designed for low voltage, low−power, high−gain audio amplifie.
* Collector *Emitter Sustaining Voltage * * High DC Current Gain * hFE = 70 (Min) @ IC = 500 mAdc * * * * * * * = 45 (Min) @ IC = 2 Adc = 10 (Min) @ IC = 5 Adc Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) Low Collector *Emitter Saturation Voltage * VCE(s. |
MJD210 Datasheet and Specifications PDF
The MJD210 is a Complementary Plastic Power Transistors.
| Part Number | MJD210 Datasheet |
|---|---|
| Description | Silicon PNP Power Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·High DC Current Gain- : hFE = 70(Min) @ IC= -0.5A ·Low Collector Saturation Voltage- : VCE(sat) = -0.3V(Max.)@ IC= -0.5 A ·Complement to the NPN MJD200 ·Minimum Lot-to-Lot variations for robust devic. Website： 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MJD210 MIN MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -10mA; IB= 0 -25 V VCE(sat)-1 . |
| Part Number | MJD210 Datasheet |
|---|---|
| Description | PNP Transistor |
| Manufacturer | Fairchild Semiconductor |
| Overview | MJD210 MJD210 D-PAK for Surface Mount Applications • • • • High DC Current Gain Low Collector Emitter Saturation Voltage Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I-PAK, “. BO = - 8V, IC = 0 VCE = - 1V, IC = - 500mA VCE = - 1V, IC = - 2A VCE = - 2V, IC = - 5A IC = - 500mA, IB= - 50mA IC = - 2A, IB = - 200mA IC = - 5A, IB = - 1A IC = - 5A, IB = - 1A VCE = - 1V, IC = - 2A VCE = - 10V, IC = - 100mA VCB = - 10V, IE = 0, f = 0.1MHz 65 120 70 45 10 Min. -25 Max. -100 -100 18. |
| Part Number | MJD210 Datasheet |
|---|---|
| Description | PNP Transistor |
| Manufacturer | Unisonic Technologies |
| Overview | The UTC MJD210 is designed for low voltage, low-power, high-gain audio amplifier applications. 1 TO-251 FEATURE * Collector-Emitter Sustaining Voltage VCEO(SUS) =-25V (Min) @ IC =-10mA * High DC . * Collector-Emitter Sustaining Voltage VCEO(SUS) =-25V (Min) @ IC =-10mA * High DC Current Gain hFE =70 (Min) @ IC=-500mA =45 (Min) @ IC=-2A =10 (Min) @ IC=-5A * Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) * Straight Lead Version in Plastic Sleeves (“-1” Suffix) * Lead . |