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MJD210 - Silicon PNP Power Transistor

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Part number MJD210
Manufacturer Inchange Semiconductor
File Size 206.59 KB
Description Silicon PNP Power Transistor
Datasheet download datasheet MJD210 Datasheet
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Description

High DC Current Gain- : hFE = 70(Min) @ IC= -0.5A Low Collector Saturation Voltage- : VCE(sat) = -0.3V(Max.)@ IC= -0.5 A Complement to the NPN MJD200 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low voltage, low -power ,high-gain audio amplifier applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO

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