Datasheet Details
| Part number | MJD210 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 206.59 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | MJD210-InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | MJD210 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 206.59 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | MJD210-InchangeSemiconductor.pdf |
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·High DC Current Gain- : hFE = 70(Min) @ IC= -0.5A ·Low Collector Saturation Voltage- : VCE(sat) = -0.3V(Max.)@ IC= -0.5 A ·plement to the NPN MJD200 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low voltage, low -power ,high-gain audio amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -8 V IC Collector Current-Continuous -5 A ICM Collector Current-Peak -10 A IB Base Current Collector Power Dissipation PC Ta=25℃ Collector Power Dissipation TC=25℃ Ti Junction Temperature -1 A 1.4 W 12.5 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 10 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 89.3 ℃/W MJD210 isc Website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MJD210 MIN MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -10mA;
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MJD210 | PNP Transistor | Fairchild |
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MJD210 | PNP Transistor | UTC |
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