MJD210
MJD210 is Silicon PNP Power Transistor manufactured by Inchange Semiconductor.
isc Silicon PNP Power Transistor
DESCRIPTION
- High DC Current Gain-
: hFE = 70(Min) @ IC= -0.5A
- Low Collector Saturation Voltage-
: VCE(sat) = -0.3V(Max.)@ IC= -0.5 A
- plement to the NPN MJD200
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for low voltage, low -power ,high-gain audio amplifier applications....
