Datasheet4U Logo Datasheet4U.com

MJD210 - Silicon PNP Power Transistor

General Description

High DC Current Gain- : hFE = 70(Min) @ IC= -0.5A Low Collector Saturation Voltage- : VCE(sat) = -0.3V(Max.)@ IC= -0.5 A Complement to the NPN MJD200 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low voltage, lo

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MJD210 PNP Transistor Fairchild
MJD210 Complementary Plastic Power Transistors ON
MJD210 SILICON POWER TRANSISTORS Motorola
MJD210 PNP Transistor UTC
MJD20 P-channel power MOSFET Sanken

Other Datasheets by Inchange Semiconductor

Part Number Description
MJD243 Silicon NPN Power Transistor
MJD253 Silicon PNP Power Transistor
MJD2955 Silicon PNP Power Transistor
MJD112 Silicon NPN Power Transistor
MJD117 Silicon PNP Power Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon PNP Power Transistor DESCRIPTION ·High DC Current Gain- : hFE = 70(Min) @ IC= -0.5A ·Low Collector Saturation Voltage- : VCE(sat) = -0.3V(Max.)@ IC= -0.5 A ·Complement to the NPN MJD200 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low voltage, low -power ,high-gain audio amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -8 V IC Collector Current-Continuous -5 A ICM Collector Current-Peak -10 A IB Base Current Collector Power Dissipation PC Ta=25℃ Collector Power Dissipation TC=25℃ Ti Junction Temperature -1 A 1.4 W 12.