Fairchild Semiconductor MJE350
PNP Epitaxial Silicon Transistor
| Part No. | MJE350 |
|---|---|
| Datasheet | MJE350 Download |
| Manufacturer |  Fairchild Semiconductor |
| Description | PNP Epitaxial Silicon Transistor |
| Buy | Stock & Price |
APPLICATIONS
● High Collector-Emitter Breakdown Voltage● Suitable for Transformer
● Complement to MJE340 1 TO-126 2.Collector 3.Base 1. Emitter ..PNP Epitaxial Silicon Transistor
ABSOLUTE MAXIMUM RATINGS
TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value - 300 - 300 -5 - 500 20 150 - 65 ~ 150 Units V V V mA W °C °CELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted Symbol BVCEO ICBO IEBO hFE Parameter Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Test Condition IC = - 1mA, IB = 0 VCB = - 300V, IE = 0 VBE = - 3V, IC = 0 VCE = - 10V, IC = - 50mA 30 Min. -300 Max. -100 -100 240 Units V µA µA ©2001 Fairchild Semiconductor Corporation Rev. A1, February 2001 MJE350 Typical Characteristics VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1000 -10...
