Fairchild Semiconductor MMBTA13
NPN Darlington Transistor
ABSOLUTE MAXIMUM RATINGS
Ta = 25°C unless otherwise noted Symbol Parameter VCES VCBO VEBO IC TJ, TSTG Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range Value 30 30 10 1.2 -55 to +150 Units V V V A °CELECTRICAL CHARACTERISTICS
Ta=25°C unless otherwise noted Symbol Parameter Test Condition Off Characteristics V(BR)CES Collector-Emitter Breakdown Voltage ICBO Collector-Cutoff Current IEBO Emitter-Cutoff Current On Characteristics * IC = 100µA, IB = 0 VCB = 30V, IE = 0 VEB = 10V, IC = 0 hFE VCE (sat) DC Current Gain Collector-Emitter Saturation Voltage V