Infineon Technologies MMBTA13
NPN Silicon Darlington Transistors
| Part No. | MMBTA13 |
|---|---|
| Datasheet | MMBTA13 Download |
| Manufacturer |  Infineon Technologies |
| Description | NPN Silicon Darlington Transistors |
| Buy | Stock & Price |
MAXIMUM RATINGS
Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Marking s1M s1N 1=B 1=B Pin Configuration 2=E 2=E 3=C 3=C Package SOT23 SOT23 Symbol VCES VCBO VEBO Values 30 30 10 300 500 100 200 330 150 -65 ... 150 Unit V DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 81 °C Junction temperature Storage temperature Thermal Resistance IC ICM IB IBM Ptot Tj Tstg RthJS mA mA mW °C Junction - soldering point1) 210 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Feb-18-2002 SMBTA13/ MMBTA13, SMBTA14/ MMBTA14ELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 µA, VBE = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 30 V, IE = 0 Collector cutoff current VCB = 30 V, IE = 0 ,...
