Description
These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package.
Features
- UL Recognized (File #E90700, volume 2).
- VDE Recognized (File #136616) (add option ‘V’ for VDE approval, e. g. , MOC211V-M).
- Convenient Plastic SOIC-8 Surface Mountable Package Style.
- Standard SOIC-8 Footprint, with 0.050" Lead Spacing.
- Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering.
- High Input-Output Isolation of 2500 VAC(rms) Guaranteed.
- Minimum BVCEO of 30V guaranteed.
MOC211-M Datasheet
