MOC211-M Description
These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density applications, and eliminate the need for through - the - board mounting.
MOC211-M Key Features
- UL Recognized (File #E90700, volume 2)
- VDE Recognized (File #136616) (add option ‘V’ for VDE approval, e.g., MOC211V-M)
- Convenient Plastic SOIC-8 Surface Mountable Package Style
- Standard SOIC-8 Footprint, with 0.050" Lead Spacing
- patible with Dual Wave, Vapor Phase and IR Reflow Soldering
- High Input-Output Isolation of 2500 VAC(rms) Guaranteed
- Minimum BVCEO of 30V guaranteed