MOCD211-M
DESCRIPTION
The MOCD211-M device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a surface mountable, small outline plastic package. It is ideally suited for high density applications and eliminates the need for through-the-board mounting.
FEATURES
- U.L. Recognized (File #E90700, Volume 2)
- VDE Recognized (File #136616) (add option “V” for VDE approval, i.e, MOCD211V-M)
- Minimum BVCEO of 30 Volts Guaranteed
- Standard SOIC-8 Footprint, with 0.050" Lead Spacing
- patible with Dual Wave, Vapor Phase and IR Reflow Soldering
- High Input-Output Isolation of 2500 VAC(rms) Guaranteed
- pact Dual Channel Optocoupler
ANODE 1 1
8 COLLECTOR 1
CATHODE 1 2
7 EMITTER 1
APPLICATIONS
- Interfacing and coupling systems of different potentials and impedances
- General purpose switching circuits
- Monitor and detection circuits
ANODE 2 3
6 COLLECTOR 2
CATHODE 2 4
5 EMITTER 2
ABSOLUTE MAXIMUM RATINGS (TA =...
