MOCD217-M Description
The MOCD217-M device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a surface mountable, small outline plastic package. It is ideally suited for high density applications and eliminates the need for through-the-board mounting.
MOCD217-M Key Features
- U.L. Recognized (File #E90700, Volume 2)
- VDE Recognized (File #136616) (add option “V” for VDE approval, i.e, MOCD217V-M)
- Low Input Current (Specified @ 1 mA)
- Minimum BVCEO of 30 Volts Guaranteed
- Convenient Plastic SOIC-8 Surface Mountable Package Style
- Standard SOIC-8 Footprint, with 0.050" Lead Spacing
- patible with Dual Wave, Vapor Phase and IR Reflow Soldering
- High Input-Output Isolation of 2500 VAC(rms) Guaranteed