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MPSA77
MPSA77
PNP Darlington Transistor
• This device is designed for applications requiring extremely high current gain at currents to 800mA. • Sourced from process 61.
1
TO-92
1. Emitter 2. Base 3. Collector
Absolute Maximum Ratings * Ta=25°C unless otherwise noted
Symbol VCES VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range Value -60 -60 -10 -1.2 -55 ~ +150 Units V V V A °C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits.
MPSA77 Datasheet
